The GnP POLI-400L is designed for Advanced CMP Process Development Applications such as MEMS, as well as CMP Characteristics Study. This System has Low Cost of Ownership and Small Footprint.
- Head, Table 30 ~ 200 rpm, Rotational motion, Head oscillation(± 12㎜)
- Size 700W 800D 1,200H㎜(POLI – 400), 970W 1,010D 1,850H㎜(POLI- 400L)
- Platen size Ø406㎜(16inch), Anodized Aluminum(Option : Teflon Coated)
- Pressing method Variable air pressure electronic controller
- Carrier Type : 70 ~ 500g/㎠(1psi ~ 7.1psi) for 4” wafer
- Membrane Type : 70 ~ 500g/㎠(1psi ~ 7.1psi) for 4”, 6” wafer
- Process Automatic sequence, Dry-in / Wet-out
- Workpiece : Max 6 inch wafer, MEMS Structure, Coupon Wafer
- CMP Process : Si CMP, Oxide CMP(BPSG, TEOS, SC), Metal CMP(W, Cu), STI, PGI etc
- Conditioning : Oscillating Head Type or Swing Arm Type
- Double Head System
- Friction Force & Temperature Monitoring System
- Stable Repeatablilty (WTWNU<5%)
- High Rigidity
- Simple, Robust and Low Cost of Ownership
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- Workpiece Max 6 inch wafer, MEMS structure, Coupon wafer
- CMP Process Si CMP, Oxide CMP(BPSG,TEOS,ThOx), Metal CMP(W, Cu), STI, etc.