Celero™ PL System

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By ONTO INNOVATION (DACH, Benelux, North France)

Supplier Info


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Product Type:

Metrology & Handling


Application:

Optical Surface Inspection


Product Description:

The Celero PL system is designed to meet the growing demand for subsurface defect inspection and classification of silicon carbide (SiC), gallium nitride (GaN) wafers, and other compound semiconductor materials. It features a laser-based phase detection and imaging technology, combining custom optics with advanced image processing algorithms to ensure best-in-class throughput and sensitivity at the lowest cost of ownership per pass.

To support both R&D and high-volume production, the system is available with a range of wafer handling options, allowing for flexible integration into different manufacturing environments. By utilizing multiple light sources and sensor channels, it can accurately detect, measure, and image subsurface crystalline defects in bulk wafers and epitaxial layers. Additionally, it identifies surface particles, scratches, pits, contamination, stains, localized or bulk wafer stress, voids, and inclusions — including edge chips and cracks — ensuring comprehensive defect inspection.

Manual or fully automated open cassette or EFEM for 100–300 mm wafers


  • Wafer sizes: 100–300 mm
  • Five detection channels: photoluminescence, polarization, slope, bright field, and dark field
  • All-surface scan (FS/BS/Edge) and imaging with sub-nanometer sensitivity
  • Particle defect (≥ 90 nm PSL) / surface contamination (≥ 5 Å)
  • Thin (≥ 100 µm) and thick (≤ 10 mm) wafer
  • Multiple handling options: wafer, film frame
  • Multiple load options: manual, automated open cassette, EFEM
  • Online and offline review capability
  • Automated Image-Based Defect Classification
  • Compatible with Discover® ecosystem

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  • Frontside/backside/edge/subsurface defectivity and contamination
  • AR/VR/MR materials and structures
  • Crystalline defectivity in silicon carbide (SiC) substrates and epitaxial layers
  • Crystalline defectivity in gallium nitride (GaN) wafers and epitaxial layers
  • Thick wafer/seed wafer surface and sub-surface defectivity
  • Substrate-to-epitaxial layer defect mapping (sub-defect mapping)
  • Wafer-based microLED/VCSEL/EE laser materials
  • Across wafer and point stress mapping
  • Wafer chuck contamination
  • Haze detection and metrology
  • Bow/warped wafer metrology
  • Thinned wafer inspection (incl. film frame handling)



You might be interested in:

OptoNano 200

Advanced microscopy technology Resolve down to 137 nm scale with OptoNano 200, the flagship of Phaos…

PrimaScan™ Series

The PrimaScan™ series of wafer and panel-level tools provides comprehensive all-surface contamination and defect inspection for…


Product Enquiry Form

    opens our Privacy Policy
  • This field is for validation purposes and should be left unchanged.