Product Type:
Equipment
Application:
Deposition
Product Description:
Atomic-Classic
Thermal ALD reactor for wafer sizes up to 8″ and process temperatures up to 450°C. Excellent conformality for a deep trench with a high aspect ratio and complex 3D nano- & micro-structures. Excellent thickness uniformity in large-area substrates.
Thermal ALD Process
- Substrate Size: 4–8” Standard (Wafer)
- Thermal ALD Process
- Laminar Gas Flow (Side Gas Flow)
- Gas Delivery System: Bubbler, LDS, etc.
- Low Particle Generation
- Small Volume for Process
- Available Laminated & Mixed Process
- Easy User Interface & Maintenance
- Max Temperature: 450 ℃ (@ Wafer)
- No. of Precursor Canisters: Up to 4 Sets (Standard)
There are currently no specification available.
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- Semiconductor (DRAM, System LSI, etc)
- Display (AMOLED, Micro-OLED, etc)
- Photovoltaic (Si base PV & CIGS)
- MEMS, Sensor, Battery, etc
- Optical-, Bio-, Nano- and Flexible Devices