Thermal ALD Process
- Substrate Size : 4 ~ 8” Standard (Wafer)
- Thermal ALD Process
- Laminar Gas Flow (Side Gas Flow)
- Gas Delivery System : Bubbler, LDS etc.
- Low Particle Generation
- Small Volume for Process
- Available Laminated & Mixed Process
- Easy User Interface & Maintenance
- Max Temperature : 450 ℃ (@ Wafer)
- No. of Precursor Canisters : Up to 4 Sets (Standard)
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- Semiconductor (DRAM, System LSI, etc)
- Display (AMOLED, Micro-OLED, etc)
- Photovoltaic (Si base PV & CIGS)
- MEMS, Sensor, Battery, etc
- Optical-, Bio-, Nano- and Flexible Devices