By FEMTO SCIENCE Inc.
Supplier Info
Product Type:
Equipment
Application:
Dry Processing & UHP
Product Description:
| High-precision RIE process: | Optimized for reactive ion etching (RIE) to achieve precise etch profiles. |
| Robust chamber construction: | Machined from a solid aluminum block (no welds), which minimizes gas leaks and increases durability. |
| Excellent uniformity: | Patented gas flow design with 3-stage showerheads for homogeneous results on up to 8-inch wafers. |
| Powerful RF generator: | 13.56 MHz frequency with up to 300 W power (Opt. 600 W) and automatic impedance matching for stable processes. |
| Precise gas management: | Up to 4 gas lines with highly responsive MFCs (mass flow controllers) for exact flow rates. |
| Advanced vacuum system: | Equipped with a soft-start valve and butterfly throttle valve for precise pressure control. |
| Intelligent control: | DSP-based controller with a 10.2-inch touchscreen for intuitive operation and real-time monitoring. |
| Flexible recipe management: | Easy saving, loading, and transferring of process recipes via USB. |
| Comprehensive monitoring: | Real-time graphical display of process parameters. |
| Compact design: | Space-saving system dimensions, including an external chiller and high-performance vacuum pump. |
Reactive Ion Etching – Vertical Chamber
| Process Mode | RIE |
| Electrode Size | 9.2 Inch (Loading up to 8″ wafer) |
| RF Generator | 13.56MHz / 300W (Opt. 600W) |
| MFC | Max. 200 sccm |
| Gauge Pressure | Atm ~ 5 x 10-4 Torr |
| Operation | Manual & Automatic |
| Geometry | W.680 x D.1,030 x H.1,200 (mm) |
file_downloadfemto-science-vita-series.pdf
- Compound Semiconductor
- Failure Analysis
- Research & Development
- Pilot Line