By APPLIED QUANTUM MATERIALS INC.
Supplier Info
Product Type:
Equipment
Application:
Chemicals & Photoresists
Product Description:
H-SiOx Resist is an electronic-grade silsesquioxane-based resin, featuring a silicon and oxygen core. This advanced polymer/resin class serves as a highly efficient negative photo- and electron-beam resist, specifically designed for nanolithography device fabrication.
With an optimized molecular weight, H-SiOx dissolves easily into homogeneous solutions using common organic solvents such as toluene, n-butyl acetate, and methyl isobutyl ketone—ideal for thin-film fabrication. Depending on film thickness, it enables the formation of dense patterns with sub-10 nm half-pitch resolution.
High-quality packaging, strict quality control, and proper storage ensure a long shelf life while preserving H-SiOx’s excellent contrast performance over time.
The performance of hydrogen silsesquioxane-based polymers (H-SiOx) as a spin-on negative resist for semiconductor lithography is unmatched by any other material.
HSQ offers:
- Ultra-High Resolution: As an inorganic resist, it has an established resolution below 10 nm, with resolutions only limited by the electron beam spot size. This capability is attributed to the small molecular size of its 3D framework, minimizing polymer aggregates and entanglements, leading to reduced linewidth variances.
- Exceptional Uniformity: Ensure consistent and reliable patterning across your substrates.
- Superior Etch and Ion Milling Resistance: After e-beam exposure or EUV irradiation, HSQ essentially turns to glass, providing far superior resistance to ion milling and etching steps compared to standard polymer resists.
- Excellent Mechanical Strength: High-resolution structures can be defined with high aspect ratios of >20:1.
AQM also focuses on synthesizing and using silicon quantum dots (SiQDs) and other nanomaterials in various applications, including lithography, life sciences, quantum photonics, sensing, and energy.
Lithography features:
- Thin uniform films (5 nm – 2 µm thickness)
- High resolution (capable of ≤10 nm patterning)
- Excellent line edge roughness
- Good dry-etch resistance
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H-SiOx is a versatile resist capable of a wide range of features from <7 nm for NEMS to as large as 2.2 µm for MEMS and for applications like:
- Lithography
- Photoresist for mask making.
- Mask for etching, e.g. Si, SiO2, Si3N4 or metals.
- Silicon-based photonics – waveguide components, grating couplers, and photonic crystals.
- Generation of stamps with nanopatterns.