Product Type:
Equipment
Application:
ALD
Product Description:
- Substratgröße: 4 ~ 12” Wafer
- Thermischer ALD-Prozess (Plasma-Prozess verfügbar)
- Gasversorgungssystem: Bubbler, LDS usw.
- Maximale Temperatur: 500 ° C (@ Wafer)
- Druckregelung: Automatische Regelung durch Drosselklappe
- Prozessanzeige: CDG-Anzeige (10 Torr)
- Vakuumpumpe: Ölfrei (Drehschieber-Pumpe erhältlich)
There are currently no specification available.
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