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Atomic Premium

Showerhead Type ALD Process

  • Substrate Size: 4 ~ 12” Standard (Wafer)
  • Thermal ALD Process (Plasma Process Available)
  • Chamber Material: anodized Al6061
  • adjustable Gap between Showerhead and Substrate
  • Gas Delivery system: Bubbler, LDS etc.
  • Max Temperature: 500(@ Wafer)
  • No. of Precursor Canistersup to 4 sets (Standard)
  • Reactant: H2O
  • Base Pressure: < 1E-3 Torr
  • Pressure Control : Automatic Control by Throttle Valve
  • Process Gauge: CDG Gauge (10 Torr)
  • Process Pump: Dry Pump (Rotary Pump Available)
  • Pumping Line Hot Trap to Reduce Particle

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