By CN1
Supplier InfoProduct Type:
Equipment
Application:
Deposition
Product Description:
Atomic Premium
Showerhead ALD reactor for wafer sizes up to 12″ and process temperatures up to 500°C. Excellent conformality and uniformity for a deep trench with high aspect ratio and complex 3D nano- & micro-structures.
Showerhead Type ALD Process
- Substrate Size: 4–12” Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Chamber Material: anodized Al6061
- Adjustable Gap between Showerhead and Substrate
- Gas Delivery System: Bubbler, LDS, etc.
- Max Temperature: 500℃ (@ Wafer)
- No. of Precursor Canisters: up to 4 sets (Standard)
- Reactant: H2O
- Base Pressure: < 1E-3 Torr
- Pressure Control: Automatic Control by Throttle Valve
- Process Gauge: CDG Gauge (10 Torr)
- Process Pump: Dry Pump (Rotary Pump Available)
- Pumping Line Hot Trap to Reduce Particle
There are currently no specification available.
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