Showerhead Type ALD Process
- Substrate Size: 4 ~ 12” Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Chamber Material: anodized Al6061
- adjustable Gap between Showerhead and Substrate
- Gas Delivery system: Bubbler, LDS etc.
- Max Temperature: 500℃ (@ Wafer)
- No. of Precursor Canisters： up to 4 sets (Standard)
- Reactant: H2O
- Base Pressure: < 1E-3 Torr
- Pressure Control : Automatic Control by Throttle Valve
- Process Gauge: CDG Gauge (10 Torr)
- Process Pump: Dry Pump (Rotary Pump Available)
- Pumping Line Hot Trap to Reduce Particle
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