- Substrate Size : 4 ~ 12” Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Gas Delivery System : Bubbler, LDS etc.
- Max Temperature : 500 ℃ (@ Wafer)
- No. of Precursor Canisters : Up to 4 Sets (Standard)
- Pressure Control : Automatic Control by Throttle Valve
- Process Gauge : CDG Gauge (10 Torr)
- Process Pump : Dry Pump (Rotary Pump Available)
- Pumping Line Hot Trap to Reduce Particle
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- Semiconductor (DRAM, System LSI, etc)
- Display (AMOLED, Micro-OLED, etc)
- Photovoltaic (Si base PV & CIGS)
- MEMS, Sensor, Battery, etc