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By CN1

Supplier Info

Product Type:

Equipment


Application:

ALD


Product Description:

Available from 4“ to 12“ wafer

  • System Specification
  • Substrate Size : 4 ~ 12” Standard (Wafer)
  • Thermal ALD Process (Plasma Process Available)
  • Gap Adjustable between Showerhead and Substrate
  • Gas Delivery System : Bubbler, LDS etc.
  • Max Temperature : 500 ℃ (@ Wafer)
  • No. of Precursor Canisters : Up to 4 Sets (Standard)
  • Pressure Control : Automatic Control by Throttle Valve
  • Process Gauge : CDG Gauge (10 Torr)
  • Process Pump : Dry Pump (Rotary Pump Available)
  • Pumping Line Hot Trap to Reduce Particle


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