Wafer Thickness & 3D Optical Profiler RT-3500

RT3500 System Specification

1 Main Operation Program Function:
Program one-click auto start / Button box (option)
Recipe programming, infinite recipe creation
Measuring points set-up on wafer Image
Automatic measurement with pre-programmed recipe
Wafer ID, Lot#, User name and other category DB
Measured data Display, Save & Export in CSV
Capable to call saved data in specified folder (File name of LOT NO.)

2 Wafer Size: Small piece, 4″, 6″, 8″, 12″ wafer (custom design available)
3 Wafer Chuck: Steel Vacuum chuck with sensor holes & ESD coating
4 Wafer Handling: Manual loading on motorized XY stage
5 XYZ Stage & work table: 350 x 350 mm Servo linear XY stage / 65 mm Z-axis/ Multi-point sensor hole work table
6 Stage Accuracy: ± 10 ㎛ / 5 ㎛ / 1 ㎛ / 0.1 ㎛
7 Anti-Vibration Support: Passive anti-vibration table (Active option)
8 HW System Frame: Steel & Granite frame
9 Operation Program: Windows 7-based KOVIS metrology studio, Nanomez V.3.5
10 PC: Industrial PC, minimum 2.2 GHz Intel i7, 32 GB Memory, 256 GB SSD
11 Accessories: 21″ single monitor, keyboard, mouse, and holder arm
12 System Size: 860(W) x 1230(D) x 1350(H) mm (System size changeable)
13 Weight: 350 kg or more
14 Electrical: 230 V single phase at 4.9 kVA (peak), 50/60 Hz
15 Vacuum: 0.5 Mpa
16 Exhaust: One 10.16 cm (4″) diameter port on the floor adjacent to the instrument
17 Environmental: Operating Temp: +18 to +24°C

Metrology 1. Wafer Thickness & Warpage Measurement Module (WT3500)

1 Capability of WT3500: Automatic Wafer Thickness (TTV) measurement
2 Optional Function: Warpage/ Bow measurement /Bump Height I Strip Thickness I Die Height ( Manual / Auto )
Edge Chip and Crack

3 Measurable Materials:

• Bare wafer (Pattern, Si, Ge, GaAs, InP, Sapphire), Glass, Solar cell, FPD □
• Wafer on tape(ring framed) / Bump wafers / Strip, PCB /

4 Metrology Sensors (option):

CCP Capacitance sensor
CLS Confocal sensor
Vision A/F height measurement
CIR Transmittance sensor
CAS high-precision micro air touch sensor

5 Measuring Range: 10–790 ㎛ thickness (max. 1,500 ㎛ including tape thickness)
6 Measurement Resolution: 0.01 ㎛
7 Measurement Accuracy: ± 0.5 ㎛
8 Repeatability: ± 0.25 ㎛
9 TTV (Total Thickness Variation): TTV (Total Thickness Variation)
10 Optional (Bump Height): Bump sizes: 50–500 ㎛
Measurement method: Manual by vision auto-focus
11 Calibration Method(Baseline): Silicon master piece, Si Certification from authorities
12 Auto-map Point (Thickness): 89 points for 12″ and 37 points for 8″ wafers
13 Software: RT-3500 main program

Metrology 2. 3D Profilometry Module (WL3500)

1 Capability of WL3500: Nano–Micro 3D profilometry
2 Vertical Resolution: VSI, VEI < 0.5 nm, VPI < 0.1 nm  3D profiler module
3 Lateral Resolution: 0.05–7.2 µm (depending on magnification)
4 Height Repeatability: ≤ 0.1% @ 1σ (standard height)
5 Objective Lens: 5 Selectable (Automatic)
6 Zoom Lens: 2 Selectable (Automatic)
7 Camera Format: 1/2″ Mono CCD (option: 1/3″ or 2/3″)
8 Scan Method: Piezo @ Capacitive Sensor Closed loop (Linearity error ≤ 0.05%)
9 Scan Range: ≤150 µm (option ≤300 µm@Piezo or 10 mm@Motor)
10 Scan Speed: 7.5 µm/sec(1x) / 22.5 µm/sec (3x)
11 Illumination: White LED
12 Filter: 2 or 3 Filter (Automatic)
13 Z Axis Stroke: 50/ 100 mm (Automatic)
14 Tilt Aixs Stroke: ±2°/ 3°/ 6°(Manual)
15 Max Workpiece Load: ≤ 10 kg
16 Auto Focus: Optional
17 Stitching: Yes
18 Software: Surface View / Surface Map @ Windows 10 64-bit.