Product Type:
Equipment
Application:
Equipment Others
Product Description:
The DXB 120 is used for process development and small-scale production. With its larger heated vacuum chamber, the DXB 120 supports larger wafers.
- The DXB 120 can be used to develop a process that was created on the DXB 525 but needs to be developed for larger wafers.
- Dual chamber technology allows the operator to manually adjust the bonding pressure.
- Heated vacuum chamber 11.25″ diameter.
- The onboard timer is used to set the bonding process duration.
- Available in two operating voltages – 120 VAC and 240 VAC both single phase.
| DXB 120 Series | DXB-120-01 | DXB-120-03 |
| Bonding Chamber Size | 79 mm | 279 mm |
| Temperature Range | 100 – 320° F (40-160° C) | 100 – 320° F (40-160° C) |
| Cycle Time Range | 1 sec – 10 min | 1 sec – 10 min |
| Power Required | 100/120 VAC 10 A, 50/60 Hz | 220/240 VAC 5 A, 50/60 Hz |
| Vacuum Required | 18 – 25 inHg | 18 – 25 inHg |
| Environmental | 60 – 80° F (15 – 27° C) 0 – 95% Humidity (non-condensing) |
60 – 80° F (15 – 27° C) 0 – 95% Humidity (non-condensing) |
| Dimensions | Height: 8″ (200 mm); Width: 15″ (375 mm); Depth: 17.5″ (440 mm); Chuck: 11.2″ (285 mm) |
Height: 8″ (200 mm); Width: 15″ (375 mm); Depth: 17.5″ (440 mm); Chuck: 11.2″ (285 mm) |
file_download191031-DXB-120.pdf
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Applications
- Wafer Thinning
- Wafer Lapping
- Metal Plating
- Wafer Polishing
- Wafer Dicing
- Deep Reaction Ion Etch
- Any other temporary wafer bonding process